? 1999 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 21n50 21 a 24n50 24 a 26n50 26 a i dm t c = 25 c, pulse width limited by t jm 21n50 84 a 24n50 96 a 26n50 104 a i ar t c = 25 c 21n50 21 a 24n50 24 a 26n50 26 a e ar t c = 25 c30mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss ,5v/ n s t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-204 = 18 g, to-247 = 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2 4 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 ? v dss t j = 25 c 200 a v gs = 0 v t j = 125 c1ma n-channel enhancement mode high dv/dt, low t rr , hdmos tm family to-247 ad (ixfh) to-204 ae (ixfm) d g features ? international standard packages ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance - easy to drive and to protect ? fast intrinsic rectifier applications ? dc-dc converters ? synchronous rectification ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac motor control ? temperature and lighting controls ? low voltage relays advantages ? easy to mount with 1 screw (to-247) (isolated mounting screw hole) ? high power surface mountable package ? high power density g = gate, d = drain, s = source, tab = drain 91525h (9/99) (tab) v dss i d25 r ds(on) ixfh/IXFM21N50 500 v 21 a 0.25 ? ? ? ? ? ixfh/ixfm/ixft24n50 500 v 24 a 0.23 ? ? ? ? ? ixfh/ixft26n50 500 v 26 a 0.20 ? ? ? ? ? t rr 250 ns hiperfet tm power mosfets to-268 (d3) case style (tab) g s
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. r ds(on) v gs = 10 v, i d = 0.5 i d25 21n50 0.25 ? 24n50 0.23 ? 26n50 0.20 ? pulse test, t 300 s, duty cycle d 2 % g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 11 21 s c iss 4200 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 450 pf c rss 135 pf t d(on) 16 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 33 45 ns t d(off) r g = 2 ? (external) 65 80 n s t f 30 40 ns q g(on) 135 160 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 28 40 nc q gd 62 85 nc r thjc 0.42 k/w r thck (to-247 case style) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 21n50 21 a 24n50 24 a 26n50 26 a i sm repetitive; 21n50 84 a pulse width limited by t jm 24n50 96 a 26n50 104 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr t j = 25 c 250 ns t j = 125 c 400 ns q rm t j = 25 c1 c t j = 125 c2 c i rm t j = 25 c10a t j = 125 c15a i f = i s -di/dt = 100 a/ s, v r = 100 v note 1: add "s" suffix for to-247 smd package option (ex: ixfh24n50s) dim. millimeter inches min. max. min. max. a 6.4 11.4 .250 .450 a1 1.53 3.42 .060 .135 ? b 1.45 1.60 .057 .063 ? d 22.22 .875 e 10.67 11.17 .420 .440 e1 5.21 5.71 .205 .225 l 11.18 12.19 .440 .480 ? p 3.84 4.19 .151 .165 ? p1 3.84 4.19 .151 .165 q 30.15 bsc 1.187 bsc r 12.58 13.33 .495 .525 r1 3.33 4.77 .131 .188 s 16.64 17.14 .655 .675 to-204 ae (ixfm) outline pins: 1 - gate, 2 - source, case - drain to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 min. recommended footprint to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ixfh21n50 ixfh24n50 ixfh26n50 IXFM21N50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50
? 1999 ixys all rights reserved fig. 1 output characteristics fig. 2 input admittance fig. 5 drain current vs. fig. 6 temperature dependence of case temperature breakdown and threshold voltage fig. 3 r ds(on) vs. drain current fig. 4 temperature dependence of drain to source resistance t j - degrees c -50 -25 0 25 50 75 100 125 150 bv/v g(th) - normalized 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 bv dss v gs(th) t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 t j - degrees c -50 -25 0 25 50 75 100 125 150 r ds(on) - normalized 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 r ds(on) - normalized 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 v gs - volts 012345678910 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 t j = 25c v ds = 10v v ds - volts 0 5 10 15 20 25 30 35 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 6v 5v t j = 25c v gs = 10v v gs = 15v i d = 12a 21n50 24n50 26n50 t j = 25c v gs = 10v 7v ixfh21n50 ixfh24n50 ixfh26n50 IXFM21N50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. fig.7 gate charge characteristic curve fig.8 forward bias safe operating area fig.9 capacitance curves fig.10 source current vs. source to drain voltage fig.11 t ransient thermal impedance v ds - volts 1 10 100 i d - amperes 0.1 1 10 100 gate charge - ncoulombs 0 25 50 75 100 125 150 175 200 v ge - volts 0 1 2 3 4 5 6 7 8 9 10 v sd - volt 0.00 0.25 0.50 0.75 1.00 1.25 1.50 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 v ds - volts 0 5 10 15 20 25 capacitance - pf 0 500 1000 1500 2000 2500 3000 3500 4000 4500 time - seconds 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal response - k/w 0.001 0.01 0.1 1 d=0.2 d=0.02 d=0.5 d=0.1 d=0.05 d=0.01 single pulse c rss c oss v ds = 250v i d = 12.5a i g = 10ma 500 10s 100s 1ms 10ms 100ms limited by r ds(on) c iss t j = 25c t j = 125c f = 1 mhz v ds = 25v ixfh21n50 ixfh24n50 ixfh26n50 IXFM21N50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50
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